TIP120 BJT Power Darlington Transistor NPN TO220



TIP120 Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@0.5A@3 V|1000@3A@3V. 

It has a maximum collector emitter saturation voltage of 2@12mA@3A|4@20mA@5A V. Its maximum power dissipation is 2000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.

The TIP120 are manufactured in planar technology with a base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.


  • TIP120

This item features:

  • Low collector-emitter saturation voltage
  • General purpose linear and switching
  • Thermal overload protection
  • Short circuit protection
  • Output transition SOA protection


  • New and Authentic Component(s) - TIP120 BJT Power Darlington Transistor NPN TO220AB IC
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