Description:
The 1N914B is a silicon epitaxial Switching Diode with compression bond construction.
Included:
Included:
- 1N914B
This item features:
- Compression Bond Construction Package (DO-35)
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Low Current Leakage
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Marking: Cathode Band and Type Number
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Operating Temperature: -55OC to +150OC
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Storage Temperature: -55O C to +150O C
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Maximum Thermal Resistance; 300O C/W Junction To Ambient
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Repetitive Reverse Voltage Vrrm Max: 100V
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Forward Current If(AV): 200mA
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Forward Voltage VF Max: 1V
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Reverse Recovery Time trr Max: 4ns
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Forward Surge Current Ifsm Max: 4A
- New and Authentic Component(s) - 1N914B Silicon epitaxial Switching Diode with compression bond construction.
- Friendly Note: Be mindful of the many, inexpensive, counterfeits available on the market.
General details:
- We are expanding on a daily basis. If you do not see the part, or quantity of the part, you are looking for, please, let us know. We will do our best to accommodate you.