Description: The 1N5226B is a 3.3V 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diode. They are Pb-free and Halide free and superior in ...
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Description: The 1N5229B Zener Single Diode is of High reliability with a very sharp reverse characteristic. Included: 1N5229B This item feature...
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Description: The 1N5233B Zener Single Diode is of High reliability with a very sharp reverse characteristic. Included: 1N5233B This item fea...
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Description: The 1N5236B is a 7.5V 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diode. They are Pb-free and Halide free and superior in b...
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Description: The 1N5241B is a 11V 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diode. They are Pb-free and Halide free and superior in...
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Description: The 1N5247B are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SO...
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Description: The 1N5248B Zener Single Diode is of High reliability with a very sharp reverse characteristic.Included: 1N5248B This item featu...
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Description: The 1N5250B is a 20V 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diode. They are Pb-free and Halide free and superior in...
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Description: The 1N5260B is a 43V 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diode. They are Pb-free and Halide free and superior in...
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Description: The 1N5401 is a standard recovery Silicon Rectifier with axial-leaded terminal. Color band denotes cathode end polarity.Included...
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Description: Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with ...
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Description: The 1N5408 is a standard recovery Silicon Rectifier with axial-leaded terminal. Color band denotes cathode end polarity.Included...
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Description: The 1N5817 are Axial Schottky Barrier Rectifier Diodes in a DO-41 package with a Maximum Repetitive Peak Reverse Voltage: 40 Vol...
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Description: The 1N5819 are Axial Schottky Barrier Rectifier Diodes in a DO-41 package with a Maximum Repetitive Peak Reverse Voltage: 40 Vol...
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Description: The 1N5822 are Axial Schottky Barrier Rectifier Diodes in a DO-27 package with a Maximum Repetitive Peak Reverse Voltage: 40 Vol...
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Description: The 1N914B is a silicon epitaxial Switching Diode with compression bond construction. Included: 1N914B This item features: Com...
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Description: The 1N916 is a silicon epitaxial Switching Diode with compression bond construction. Included: 1N916 This item features: Compr...
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Description: This product has a resistance value of 2.2K Ohm. This part has a power rating of 0.125 (1/8) W. Its temperature coefficient is -400 ...
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Description: These Carbon Film Resistors are manufactured by coating a homogeneous film of pure carbon on high grade ceramic rods. After a h...
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Description: This product has a resistance value of 200 Ohm. This dependable part has a power rating of 0.25 (1/4) W. Its temperature coefficient...
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Description: This product has a resistance value of 20k Ohm. This dependable part has a power rating of 0.25 (1/4) W. Its temperature coefficient...
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Description: This product has a resistance value of 22 Ohm. This dependable part has a power rating of 0.25 (1/4) W. Its temperature coefficient ...
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Description: This product has a resistance value of 200 Ohm. This dependable part has a power rating of 0.25 (1/4) W. Its temperature coefficient...
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Description: The 220 pF, 100 V, ±10% Multilayer Ceramic Capacitor, Radial Leaded, with a X7R Dielectric Characteristic. Included: 220 pF, 100 V, ±...
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Description: The 220 pF, 50V, 5% Tolerance Multilayer Ceramic Capacitor is Radial Leaded with a COG/NPO Dielectric.Included: 220 pF, 50V ...
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Description: This product has a resistance value of 220k Ohm. This dependable part has a power rating of 0.25 (1/4) W. Its temperature coefficien...
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Description: This product has a resistance value of 270 Ohm. This dependable part has a power rating of 0.25 (1/4) W. Its temperature coefficient...
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Description: The 2k Ohm Carbon Film Resistor ±5% 350 V 500 mW is a Carbon Film Resistor with a rod type ceramic body and tin-plated iron surface s...
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Description: The 2N2222 is a NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Included: 2N2222 This ...
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Description: The 2N3904 transistor is a silicon epitaxial planar NPN general purpose amplifier and switch. The useful dynamic range extends to ...
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Description: The ON Semiconductor 2N3906 transistor is a silicon epitaxial planar PNP general purpose amplifier and switch. The useful dynamic r...
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Description: The 2N4441 transistor is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Incl...
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Description: The 2N5551 is a NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications, switching and amplification ...
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Description: The 3 pF, 50V ± 0.25pF Tolerance Multilayer Ceramic Capacitor is Radial Leaded with a COG/NPO Dielectric.Included: 3 pF, 50V ± ...
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Description: These Carbon Film Resistors are manufactured by coating a homogeneous film of pure carbon on high grade ceramic rods. After a h...
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Description: The 3.3k Ohm Precision Metal Film Resistor 400 mW 1% 200V are axial leaded, professional grade metal film resistors based on thin...
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